Methods of forming conductive materials

Details Methods of forming conductive materials Methods of forming conductive materials

2008-04-08

2008-04-08

Ngô, Ngân V. (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

C438S598000, C438S655000, C438S681000, C438S682000, C257SE21522, C257SE21536

Reexamination Certificate

active

10931559

ABSTRACT:
The invention includes a method of forming a metal-comprising mass for a semiconductor construction. A semiconductor substrate is provided, and a metallo-organic precursor is provided proximate the substrate. The precursor is exposed to a reducing atmosphere to release metal from the precursor, and subsequently the released metal is deposited over the semiconductor substrate. The invention also includes capacitor constructions, and methods of forming capacitor constructions.

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