Methods of forming conductive materials

Details Methods of forming conductive materials Methods of forming conductive materials

2008-04-08

2008-04-08

Ngô, Ngân V. (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

C438S598000, C438S655000, C438S681000, C438S682000, C257SE21522, C257SE21536

Reexamination Certificate

active

07354842

ABSTRACT:
The invention includes a method of forming a metal-comprising mass for a semiconductor construction. A semiconductor substrate is provided, and a metallo-organic precursor is provided proximate the substrate. The precursor is exposed to a reducing atmosphere to release metal from the precursor, and subsequently the released metal is deposited over the semiconductor substrate. The invention also includes capacitor constructions, and methods of forming capacitor constructions.

REFERENCES:
patent: 5130172 (1992-07-01), Hicks et al.
patent: 5248636 (1993-09-01), Davis et al.
patent: 5372849 (1994-12-01), McCormick et al.
patent: 5392189 (1995-02-01), Fazan et al.
patent: 5668040 (1997-09-01), Byun
patent: 5817175 (1998-10-01), Iyer
patent: 5856236 (1999-01-01), Lai et al.
patent: 5907789 (1999-05-01), Komatsu
patent: 6063705 (2000-05-01), Vaartstra
patent: 6074945 (2000-06-01), Vaartstra et al.
patent: 6143191 (2000-11-01), Baum et al.
patent: 6162712 (2000-12-01), Baum et al.
patent: 6165834 (2000-12-01), Agarwal et al.
patent: 6197628 (2001-03-01), Vaartstra et al.
patent: 6211034 (2001-04-01), Visokay et al.
patent: 6271131 (2001-08-01), Uhlenbrock et al.
patent: 6284655 (2001-09-01), Marsh
patent: 6294425 (2001-09-01), Hideki
patent: 6313035 (2001-11-01), Sandhu et al.
patent: 6355492 (2002-03-01), Tanaka et al.
patent: 6358790 (2002-03-01), Fritzinger et al.
patent: 6391797 (2002-05-01), Takehiro et al.
patent: 6429127 (2002-08-01), Derderian et al.
patent: 6492261 (2002-12-01), Gavish et al.
patent: 6515843 (2003-02-01), Nakabayashi et al.
patent: 6518610 (2003-02-01), Yang et al.
patent: 6541067 (2003-04-01), Marsh et al.
patent: 6690055 (2004-02-01), Uhlenbrock et al.
patent: 6740585 (2004-05-01), Yoon et al.
patent: 6780753 (2004-08-01), Latchford et al.
patent: 6849122 (2005-02-01), Fair
patent: 6946393 (2005-09-01), Lai et al.
patent: 6984591 (2006-01-01), Buchanan et al.
patent: 2001/0025976 (2001-10-01), Lee
patent: 2001/0055869 (2001-12-01), Marsh
patent: 2002/0043722 (2002-04-01), Taguwa
patent: 2002/0056839 (2002-05-01), Joo et al.
patent: 2002/0086108 (2002-07-01), Yang et al.
patent: 2002/0098686 (2002-07-01), Kobayashi et al.
patent: 2003/0025206 (2003-02-01), Derraa et al.
patent: 2003/0052356 (2003-03-01), Yang et al.
patent: 2004/0020434 (2004-02-01), Gavish et al.
patent: 2004/0214392 (2004-10-01), Nabatame et al.
patent: 2006/0009034 (2006-01-01), Lai et al.
patent: 2006/0121733 (2006-06-01), Kilpela et al.
patent: 2006/0128150 (2006-06-01), Gandikota et al.
patent: 2006/0220249 (2006-10-01), Johnston et al.
patent: 2006/0261441 (2006-11-01), Marsh et al.
patent: 2001-160617 (2001-06-01), None
patent: WO 01/24237 (2001-04-01), None
patent: 02/26191 (2002-08-01), None
patent: US02/26191 (2002-08-01), None
Hiratani, M. et al., A Conformal Ruthenium Electrode for MIM Capacitors in Gbit DRAMs Using the CVD Technology Based on Oxygen-Controlled Surface Reaction, IEEE, 2000 Symposium on VLSI Technology Digest of Technical Papers, pp. 102-103.
Kim, Y. et al., “Growth of RuOx Thin Films by Metal Organic Chemical Vapor Deposition”, IEEE 1999, pp. 501-502.
Quirk, et al.,Semiconductor Manufacturing Technology(2001), Prentice Hall, pp. 307-308.
Van Zant, Peter; Microchip Fabrication (2000); McGraw-Hill; Fourth Edition; pp. 504-505.

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