Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2005-11-15
2005-11-15
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S253000, C438S255000, C438S396000, C438S700000
Reexamination Certificate
active
06964910
ABSTRACT:
Methods of forming conductive capacitor plugs, methods of forming capacitor contact openings, and methods of forming memory arrays are described. In one embodiment, a conductive capacitor plug is formed to extend from proximate a substrate node location to a location elevationally above all conductive material of an adjacent bit line. In another embodiment, a capacitor contact opening is etched through a first insulative material received over a bit line and a word line substantially selective relative to a second insulative material covering portions of the bit line and the word line. The opening is etched to a substrate location proximate the word line in a self-aligning manner relative to both the bit line and the word line. In another embodiment, capacitor contact openings are formed to elevationally below the bit lines after the bit lines are formed. In a preferred embodiment, capacitor-over-bit line memory arrays are formed.
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Le Dung A.
Wells St. John P.S.
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