Methods of forming carbon nanotubes and methods of...

Semiconductor device manufacturing: process – Having biomaterial component or integrated with living organism

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S551000, C977S742000, C977S762000, C977S778000, C257SE21295, C257SE21582, C257SE21589, C257SE23165, C257SE27004, C257SE51038, C257SE51040

Reexamination Certificate

active

07625766

ABSTRACT:
A step wall is formed over a substrate. Catalytic material of different composition than the step wall is provided proximate thereto. A carbon nanotube is grown from the catalytic material along the step wall generally parallel to the substrate. A method of fabricating integrated circuitry includes forming a step wall over a semiconductor substrate. Catalytic material is provided proximate the step wall. An elevationally outer surface of the catalytic material is masked with a masking material. The catalytic material and the masking material are patterned to form an exposed end sidewall of the catalytic material proximate the step wall, with remaining of the elevationally outer surface of the catalytic material being masked. A carbon nanotube is grown from the exposed end sidewall of the catalytic material along the step wall generally parallel to the semiconductor substrate. The carbon nanotube is incorporated into a circuit component of an integrated circuit.

REFERENCES:
patent: 6129901 (2000-10-01), Moskovits et al.
patent: 6250984 (2001-06-01), Jin et al.
patent: 6312303 (2001-11-01), Yaniv et al.
patent: 6325909 (2001-12-01), Li et al.
patent: 6706402 (2004-03-01), Rueckes et al.
patent: 6803260 (2004-10-01), Shin et al.
patent: 6803840 (2004-10-01), Hunt et al.
patent: 6864162 (2005-03-01), Jin
patent: 6887450 (2005-05-01), Chen et al.
patent: 7129097 (2006-10-01), Furukawa et al.
patent: 7172953 (2007-02-01), Lieber et al.
patent: 2007/0023839 (2007-02-01), Furukawa et al.
Han et al.,Template-Free Directional Growth of Single-Walled Carbon Nanotubes on a- and r-Plane Sapphire, J. Am. Chem. Soc., vol. 127, No. 15, pp. 5294-5295 (2005).
Meyyappan et al.,Carbon nanotube growth by PECVD: a review, Plasma Sources Sci. Technol., 12, pp. 205-216 (2003).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Methods of forming carbon nanotubes and methods of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming carbon nanotubes and methods of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming carbon nanotubes and methods of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4121408

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.