Methods of forming capacitors

Details Methods of forming capacitors Methods of forming capacitors

2011-02-22

2011-02-22

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C257SE27048

Reexamination Certificate

active

07892937

ABSTRACT:
Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

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