Methods of forming capacitor structures including L-shaped...

Details Methods of forming capacitor structures including L-shaped... Methods of forming capacitor structures including L-shaped...

2007-12-25

2007-12-25

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S438000, C438S239000, C438S253000, C438S254000, C438S396000, C438S381000

Reexamination Certificate

active

10977385

ABSTRACT:
Methods of forming capacitor structures may include forming an insulating layer on a substrate, forming a first capacitor electrode on the insulating layer, forming a capacitor dielectric layer on portions of the first capacitor electrode, and forming a second capacitor electrode on the capacitor dielectric layer such that the capacitor dielectric layer is between the first and second capacitor electrodes. More particularly, the first capacitor electrode may define a cavity therein wherein the cavity has a first portion parallel with respect to the substrate and a second portion perpendicular with respect to the substrate. Related structures are also discussed.

REFERENCES:
patent: 6080632 (2000-06-01), Chao
patent: 6136643 (2000-10-01), Jeng et al.
patent: 6156608 (2000-12-01), Chen
patent: 6281535 (2001-08-01), Ma et al.
patent: 6483141 (2002-11-01), Sano
patent: 2003/0227045 (2003-12-01), Lee et al.
patent: 2000-77622 (2000-03-01), None
patent: 10-2003-0001917 (2003-01-01), None
patent: 10-2003-0001918 (2003-01-01), None
English Translation of Korean Office Action for Application No. 10/2002-0029494 dated May 28, 2004.

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