Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Warping of semiconductor substrate
Reexamination Certificate
2011-01-18
2011-01-18
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Warping of semiconductor substrate
C438S458000, C438S459000
Reexamination Certificate
active
07871899
ABSTRACT:
A method of processing a wafer including a plurality of integrated circuit devices on a front side of the wafer, may include thinning the wafer from a back side opposite the front side. After thinning the wafer, a back side layer may be provided on the back side of the thinned wafer opposite the front side, and the back side layer may be configured to counter stress on the front side of the wafer including the plurality of integrated circuit devices thereon. After providing the back side layer, the plurality of integrated circuit devices may be separated. Related structures are also discussed.
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Berry Chirstopher John
Engel Kevin
Rinne Glenn A.
Roe Julia
Amkor Technology Inc.
Chi Suberr
Myers Bigel Sibley & Sajovec P.A.
Vu David
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