Methods of forming and inspecting semiconductor device patterns

Details Methods of forming and inspecting semiconductor device patterns Methods of forming and inspecting semiconductor device patterns

1991-08-13

1993-06-08

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430311, 2504922, G03F 720

Patent

active

052178340

ABSTRACT:
Method of forming a pattern on a semiconductor wafer, the temperature of the semiconductor wafer being detected by a thermocouple. When the detected temperature is at a specified value which indicates that the deformation of the semiconductor wafer is within an allowable range, a step of forming a pattern on the semiconductor wafer is performed. This forming method improves the accuracy in forming the pattern. Also, in a method of inspecting a pattern on a semiconductor wafer, the temperature of the semiconductor wafer is detected using a thermocouple. When the detected temperature is at a specified value which indicates that the deformation of the semiconductor wafer is within an allowable range, a step of inspecting a pattern on the semiconductor wafer is performed. This inspecting method improves the accuracy in inspecting the pattern.

REFERENCES:
patent: 3998639 (1976-12-01), Feldman
patent: 4864356 (1989-09-01), Asano
patent: 5044750 (1991-09-01), Shamble

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