Methods of forming an interconnect structure

Details Methods of forming an interconnect structure Methods of forming an interconnect structure

2008-01-15

2009-06-30

Chambliss, Alonzo (Department: 2892)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

With electrical circuit layout

C438S622000, C257S758000, C257S774000, C257S776000, C257SE23143, C257SE23145

Reexamination Certificate

active

07553703

ABSTRACT:
Semiconductor devices having conductive lines with extended ends and methods of extending conductive line ends by a variable distance are disclosed. An end of a first conductive feature of an interconnect structure is extended by a first distance, and an end of a second conductive feature of the interconnect structure is extended by a second distance, the second distance being different than the first distance. Ends of conductive features that are positioned close to adjacent conductive features are preferably not extended.

REFERENCES:
patent: 5506450 (1996-04-01), Lee et al.
patent: 5620916 (1997-04-01), Eden et al.
patent: 6097094 (2000-08-01), Ishigami
patent: 6753611 (2004-06-01), Maeno et al.
patent: 6826742 (2004-11-01), Maeno et al.
patent: 7245019 (2007-07-01), Murata et al.
patent: 7332812 (2008-02-01), Herold et al.
patent: 2004/0056280 (2004-03-01), Murata et al.
patent: 2005/0179134 (2005-08-01), Matsubara

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