Methods of forming a silicon nitride film, a capacitor dielectri

Details Methods of forming a silicon nitride film, a capacitor dielectri Methods of forming a silicon nitride film, a capacitor dielectri

1998-02-05

2000-06-20

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438703, 438775, H01L 21318

Patent

active

060777540

ABSTRACT:
A method of forming silicon nitride includes, a) forming a first layer comprising silicon nitride over a substrate; b) forming a second layer comprising silicon on the first layer; and c) nitridizing silicon of the second layer into silicon nitride to form a silicon nitride comprising layer, said silicon nitride comprising layer comprising silicon nitride of the first and second layers. Further, a method of forming a capacitor dielectric layer of silicon nitride includes, a) forming a first capacitor plate layer; b) forming a first silicon nitride layer over the first capacitor plate layer; c) forming a silicon layer on the silicon nitride layer; d) nitridizing the silicon layer into a second silicon nitride layer; and e) forming a second capacitor plate layer over the second silicon nitride layer. Also, a method of forming a capacitor dielectric layer over a capacitor plate layer includes, a) forming a first layer of dielectric material over a capacitor plate layer; b) conducting a pin-hole widening wet etch of the first layer; and c) after the wet etch, forming a pin-hole plugging second layer of dielectric material on the first layer and within the widened pin-holes.

REFERENCES:
patent: 3627598 (1971-12-01), McDonald et al.
patent: 5227651 (1993-07-01), Kim et al.
patent: 5324679 (1994-06-01), Kim et al.
patent: 5350707 (1994-09-01), Ko et al.
patent: 5376593 (1994-12-01), Sandhu et al.
patent: 5459105 (1995-10-01), Matsuura
patent: 5504029 (1996-04-01), Murata et al.
patent: 5508542 (1996-04-01), Geiss et al.
patent: 5523596 (1996-06-01), Ohi et al.
patent: 5712208 (1998-01-01), Tseng
patent: 5719066 (1998-02-01), Sano et al.
patent: 5913149 (1999-06-01), Thakur
Stanley Wolf; "Silicon Processing For the VLSI Era"; vol. 3; undated; pp. 648-649.

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