Methods of forming a mask pattern and methods of forming a field

Semiconductor device manufacturing: process – Electron emitter manufacture

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118 56, 118100, 427180, 427194, 427277, 427278, 427355, 427356, 430 20, H01L 21027

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active

061435805

ABSTRACT:
Methods of forming mask patterns and methods of forming field emitter tip masks are described. In one embodiment a first surface is provided over which a mask pattern is to be formed. A mixture comprising mask particles is applied to a second surface comprising material joined with the first layer. The mixture, as applied, leaves an undesirable distribution of mask particles over the first surface. After application of the mixture to the second surface, the mask particles are laterally distributed over the first surface, into a desirable distribution by placing a particle-dispersing structure directly into the mixture on the second surface and moving the particle-dispersing structure laterally through the mixture on the second surface. In another embodiment, a mixture is formed on the substrate's second surface and includes a liquid component and a plurality of solid mask-forming components. A mixture-thinning structure is positioned over the substrate and separated from the second surface thereof only by the mixture. The mixture-thinning structure is moved through the mixture in a manner which forms at least some of the mask-forming components into a monolayer of single mask components over the second surface.

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