Methods of forming a high germanium concentration silicon...

Details Methods of forming a high germanium concentration silicon... Methods of forming a high germanium concentration silicon...

2006-10-17

2006-10-17

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Groove formation

C438S093000, C438S481000, C438S483000

Reexamination Certificate

active

07122392

ABSTRACT:
A method of forming a high germanium concentration, low defect density silicon germanium film and its associated structures is described, comprising forming a dielectric layer on a substrate, patterning the dielectric layer to form a silicon region and at least one dielectric region, and forming a low defect silicon germanium layer on at least one dielectric region.

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Zytkiewicz: Laterally Overgrown Structures as Substrates for Lattice Mismatched Epitaxy; Thin Solid Films 412 (2002); pp. 64-75.

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