Methods of forming a high conductivity diamond film and...

Semiconductor device manufacturing: process – Having diamond semiconductor component

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S122000

Reexamination Certificate

active

07553694

ABSTRACT:
A method of forming a high thermal conductivity diamond film and its associated structures comprising selectively nucleating a region of a substrate, and forming a diamond film on the substrate such that the diamond film has large grains, which are at least about 20 microns in size. Thus, the larger grained diamond film has greatly improved thermal management capabilities and improves the efficiency and speed of a microelectronic device.

REFERENCES:
patent: 4259090 (1981-03-01), Bovenkerk
patent: 5082522 (1992-01-01), Purdes et al.
patent: 5242711 (1993-09-01), DeNatale et al.
patent: 5298286 (1994-03-01), Yang et al.
patent: 5432003 (1995-07-01), Plano et al.
patent: 5443032 (1995-08-01), Vichr et al.
patent: 5449531 (1995-09-01), Zhu et al.
patent: 5474808 (1995-12-01), Aslam
patent: 5478513 (1995-12-01), Kosky et al.
patent: 5487945 (1996-01-01), Yang et al.
patent: 5488232 (1996-01-01), Glass et al.
patent: 5488350 (1996-01-01), Aslam et al.
patent: 5501877 (1996-03-01), Adair et al.
patent: 5541423 (1996-07-01), Hirabayashi
patent: 5559367 (1996-09-01), Cohen et al.
patent: 5607723 (1997-03-01), Plano et al.
patent: 5614019 (1997-03-01), Vichr et al.
patent: 5614272 (1997-03-01), Shah
patent: 5654044 (1997-08-01), Moran
patent: 5656828 (1997-08-01), Zachai et al.
patent: 5674355 (1997-10-01), Cohen et al.
patent: 5679269 (1997-10-01), Cohen et al.
patent: 5683939 (1997-11-01), Schrantz et al.
patent: 5686152 (1997-11-01), Johnson et al.
patent: 5733369 (1998-03-01), Yonehara et al.
patent: 5750243 (1998-05-01), Shikata et al.
patent: 5795653 (1998-08-01), Cuomo et al.
patent: 5812362 (1998-09-01), Ravi
patent: 5843224 (1998-12-01), Zachai et al.
patent: 5849413 (1998-12-01), Zhu et al.
patent: 5853478 (1998-12-01), Yonehara et al.
patent: 5855954 (1999-01-01), Gutheit et al.
patent: 5891575 (1999-04-01), Marchywka et al.
patent: 5939140 (1999-08-01), Oji et al.
patent: 6082200 (2000-07-01), Aslam et al.
patent: 6110759 (2000-08-01), Konrad et al.
patent: 6126855 (2000-10-01), Elliott
patent: 6329674 (2001-12-01), Konrad et al.
patent: 6537668 (2003-03-01), Vijayen et al.
patent: 6544627 (2003-04-01), Vijayen et al.
patent: 6740384 (2004-05-01), Veerasarny et al.
patent: 6770966 (2004-08-01), Chrysler et al.
patent: 6783589 (2004-08-01), Dahl et al.
patent: 6805891 (2004-10-01), Vijayen et al.
patent: 6830813 (2004-12-01), Ravi
patent: 6921706 (2005-07-01), Chrysler et al.
patent: 6936497 (2005-08-01), Ravi et al.
patent: 6987028 (2006-01-01), Ravi
patent: 7170098 (2007-01-01), Chrysler et al.
patent: 2004/0108506 (2004-06-01), Ravi et al.
patent: 2004/0188262 (2004-09-01), Heimann et al.
patent: 2004/0191534 (2004-09-01), Ravi
patent: 2005/0017351 (2005-01-01), Ravi
patent: 2005/0112793 (2005-05-01), Ravi et al.
patent: 2005/0189544 (2005-09-01), Ravi et al.
patent: 03115194 (1991-05-01), None
U.S. Appl. No. 10/973,161, filed Oct. 25, 2004, inventor: Ravi. Office Action dated Aug. 8, 2006.
U.S. Appl. No. 10/313,686, filed Dec. 5, 2002; inventor: Kramadhati V. Ravi; Office Action dated Oct. 5, 2006.
Notice of Allowance from U.S. Appl. No. 10/313,686, mailed Sep. 19, 2007, 8 pgs.
Office Action from U.S. Appl. No. 10/313,686, mailed Jan. 29, 2007, 11 pgs.
Office Action from U.S. Appl. No. 10/313,686, mailed Nov. 29, 2005, 7 pgs.
Office Action from U.S. Appl. No. 10/313,686, mailed Jun. 14, 2005, 7 pgs.
Office Action from U.S. Appl. No. 10/313,686, mailed Dec. 27, 2004, 7 pgs.
Office Action from U.S. Appl. No. 10/313,686, mailed Jun. 14, 2006, 4 pgs.
Notice of Allowance from U.S. Appl. No. 10/313,686, mailed Nov. 29, 2007, 5 pgs.
Office Action from U.S. Appl. No. 10/973,161, mailed Aug. 22, 2007, 9 pgs.
Notice of Allowance from U.S. Appl. No. 10/973,161, mailed Nov. 28, 2008, 7 pgs.
Notice of Allowance from U.S. Appl. No. 10/973,161, mailed Apr. 2, 2008, 6 pgs.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Methods of forming a high conductivity diamond film and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming a high conductivity diamond film and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming a high conductivity diamond film and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4128793

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.