Methods of forming a high conductivity diamond film and...

Details Methods of forming a high conductivity diamond film and... Methods of forming a high conductivity diamond film and...

2004-10-25

2008-08-26

Schillinger, Laura M. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S078000, C257S079000

Reexamination Certificate

active

07417255

ABSTRACT:
A method of forming a high thermal conductivity diamond film and its associated structures comprising selectively nucleating a region of a substrate, and forming a diamond film on the substrate such that the diamond film has large grains, which are at least about 20 microns in size. Thus, the larger grained diamond film has greatly improved thermal management capabilities and improves the efficiency and speed of a microelectronic device.

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