Compositions: coating or plastic – Coating or plastic compositions – Silicon containing other than solely as silicon dioxide or...
Reexamination Certificate
2008-01-01
2008-01-01
Moore, Margaret G. (Department: 1712)
Compositions: coating or plastic
Coating or plastic compositions
Silicon containing other than solely as silicon dioxide or...
C106S187100, C252S182300, C252S182330, C252S182350, C252S182320
Reexamination Certificate
active
07314513
ABSTRACT:
Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized/polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and/or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing/recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high throughput, low cost equipment and techniques for making doped semiconductor films of commercial quality and quantity from doped “liquid silicon.”
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Cleeves James Montague
Dioumaev Vladimir K.
Guo Wenzhuo
Kunze Klaus
Ridley Brent
Fortney Andrew D.
Kovio Inc.
Moore Margaret G.
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