Methods of forming a contact opening in a semiconductor...

Details Methods of forming a contact opening in a semiconductor... Methods of forming a contact opening in a semiconductor...

2005-11-23

2008-11-11

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

Groove

C257S396000, C257SE21320, C257SE21416, C257SE21421, C257SE21545

Reexamination Certificate

active

07449766

ABSTRACT:
Methods to form contact openings and allow the formation of self-aligned contacts for use in the manufacture of semiconductor devices are described. During formation of a multi-layered resist, a hard mask material is introduced beneath an anti-reflective coating to be used as an etch stop layer. The multi-layered resist is patterned and etched, to transfer the desired contact pattern to a substrate material, such as a silicon substrate, to form contact openings therein. The contact openings provide for the formation of self-aligned contacts therein.

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