Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-09-11
2007-09-11
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S435000, C438S788000, C257SE21548
Reexamination Certificate
active
11095186
ABSTRACT:
The invention includes methods in which oxide is formed within openings in a three-step process. A first step is deposition of oxide under a pressure of greater than 15 mTorr. A second step is removal of a portion of the oxide with an etch. A third step is an oxide deposition under a pressure of less than or equal to 10 mTorr. Methodology of the present invention can be utilized for forming trenched isolation regions, such as, for example, shallow trench isolation regions.
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Ryan Joseph M.
VanGerpen Damon E.
Smoot Stephen W.
Wells St. John P.S.
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