Methods of fabrication of submicron features in semiconductor de

Details Methods of fabrication of submicron features in semiconductor de Methods of fabrication of submicron features in semiconductor de

1995-12-11

1997-02-04

Dang, Trung

Fishing, trapping, and vermin destroying

437175, 437228, 216 77, H01L 2144

Patent

active

055997384

ABSTRACT:
A process of fabricating submicron features including depositing a gate metal layer on a substrate and forming a first etchable layer of material on the metal layer to define a first sidewall. A second etchable layer is deposited on the structure so as to define a second sidewall. The second etchable layer is etched so as to leave only the second sidewall and the first etchable layer is removed. The metal layer is etched using the second sidewall as an etch mask to form a submicron feature. The width of the feature depends upon the thickness of the metal layer.

REFERENCES:
patent: 4354896 (1982-10-01), Hunter et al.
patent: 4358340 (1982-11-01), Fu
patent: 4432132 (1984-02-01), Kinsbron et al.
patent: 4648937 (1987-03-01), Ogura et al.
patent: 4689869 (1987-09-01), Jambotkar et al.

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