Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2008-06-04
2010-02-09
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257S900000, C257SE21626, C257SE21640
Reexamination Certificate
active
07659561
ABSTRACT:
Methods of forming spacers on sidewalls of features of semiconductor devices and structures thereof are disclosed. A preferred embodiment comprises a semiconductor device including a workpiece and at least one feature disposed over the workpiece. A first spacer is disposed on the sidewalls of the at least one feature, the first spacer comprising a first material. A first liner is disposed over the first spacer and over a portion of the workpiece proximate the first spacer, the first liner comprising the first material. A second spacer is disposed over the first liner, the second spacer comprising a second material. A second liner is disposed over the second spacer, the second liner comprising the first material.
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Hoang Quoc D
Infineon - Technologies AG
Slater & Matsil L.L.P.
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