Methods of fabricating semiconductor devices

Details Methods of fabricating semiconductor devices Methods of fabricating semiconductor devices

2007-09-04

2007-09-04

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to nonconductive state

C438S601000, C438S638000

Reexamination Certificate

active

11025377

ABSTRACT:
Disclosed are methods of fabricating a semiconductor device, by which the pad and fuse layers play their roles smoothly and to enhance a quality of a final semiconductor device. According to one example, a disclosed method includes forming an insulating layer covering a pad and a fuse on prescribed portions of a substrate, simultaneously forming a first trench exposing an anti-reflective coating layer provided as a top layer of the pad and a second trench having a portion of the insulating layer underneath over the fuse by selectively removing the first insulating layer, filling up the first and second trenches with an etch rate adjustment layer, exposing the anti-reflective coating layer to leave a portion of the etch rate adjustment layer within the second trench by selectively removing the etch rate adjustment layer, and simultaneously removing the anti-reflective coating layer and the portion of the etch rate adjustment layer from the second trench.

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