Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2011-07-05
2011-07-05
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C977S723000, C977S782000, C977S811000, C257S043000, C257SE29094
Reexamination Certificate
active
07972900
ABSTRACT:
The present invention provides methods of forming metal oxide semiconductor nanostructures and, in particular, zinc oxide (ZnO) semiconductor nanostructures, possessing high surface area, plant-like morphologies on a variety of substrates. Optoelectronic devices, such as photovoltaic cells, incorporating the nanostructures are also provided.
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Snure Michael R.
Tiwari Ashutosh
Bell & Manning, LLC
Landau Matthew C
McCall Shepard Sonya D
University of Utah Research Foundation
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