Methods of fabricating nanoclusters and dielectric layer...

Details Methods of fabricating nanoclusters and dielectric layer... Methods of fabricating nanoclusters and dielectric layer...

2007-03-13

2007-03-13

Lee, John D. (Department: 2874)

Optical waveguides

Miscellaneous

C385S141000, C438S381000, C977S779000, C977S810000, C977S890000

Reexamination Certificate

active

11392762

ABSTRACT:
Methods of fabricating nanoclusters, e.g., germanium nanoclusters, and/or a dielectric layer having the same are provided. The method may include forming a first silicon oxide layer on a silicon substrate; forming a germanium (GeO) layer on the silicon oxide layer; altering the germanium oxide (GeO) layer into a germanium dioxide (GeO2) layer and/or a first group of germanium (Ge) nanoclusters; and/or altering germanium dioxide (GeO2) into silicon dioxide (SiO2) such that a second group of germanium (Ge) nanoclusters may be formed. The nanoclusters, e.g., germanium nanoclusters, may have more homogeneous sizes and/or may be more evenly arranged the dielectric layer such that the nanoclusters, e.g., germanium nanoclusters, may be easily used in a semiconductor device.

REFERENCES:
patent: 6656792 (2003-12-01), Choi et al.
patent: 6659792 (2003-12-01), Saka

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