Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-08-09
2005-08-09
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S238000, C438S381000
Reexamination Certificate
active
06927073
ABSTRACT:
In accordance with one or more embodiments of the present invention, a technique fabricating a magnetoresistive memory device, where the magnetoresistive memory device has a magnetic memory element and a plurality of conductors for at least one of reading and writing the magnetic memory element. The plurality of conductors include a first conductor at least partially located at a first side of the magnetic memory element for reading the magnetic memory element, a second conductor at least partially located at a second side of the magnetic memory element for reading the magnetic memory element, a third conductor at least partially located at the second side of the magnetic memory element for writing the magnetic memory element, and a fourth conductor at least partially located at the first side of the magnetic memory element for writing the magnetic memory element. The first conductor is formed before the fourth conductor.
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Cooley & Godward LLP
Nhu David
Nova Research, Inc.
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