Methods of fabricating integrated optoelectronic devices

Semiconductor device manufacturing: process – Manufacture of electrical device controlled printhead

Reexamination Certificate

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C438S007000, C438S196000, C438S207000, C438S041000, C257SE25032, C257S499000, C257SE31127

Reexamination Certificate

active

11022364

ABSTRACT:
This disclosure concerns methods for fabrication of integrated high speed optoelectronic devices. In one example of such a method, a device region that includes a top surface and a bottom surface is formed on a top surface of a substrate. The device region may take the form of an optical emitter, such as a VCSEL, or a detector, such as a photodiode. Next, an isolation region is formed that is configured such that the device region is surrounded by the isolation region. A superstrate is then disposed on the top surface of the device region. Finally, a micro-optical device, such as a lens, is placed on a top surface of the superstrate.

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