Methods of fabricating integrated circuit devices having...

Details Methods of fabricating integrated circuit devices having... Methods of fabricating integrated circuit devices having...

2007-07-03

2007-07-03

Malsawma, Lex (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

C257SE21004

Reexamination Certificate

active

11184413

ABSTRACT:
Methods of forming integrated circuit devices include forming patterned layers having different resistivities on semiconductor substrates. These methods include forming a first electrically conductive layer having a first resistivity on first and second portions of a semiconductor substrate. The first portion of the semiconductor substrate may include a memory cell array portion of the substrate and the second portion of the semiconductor substrate may include a peripheral circuit portion of the substrate, which extends adjacent the memory cell array portion. The first electrically conductive layer is patterned to define an upper capacitor electrode on the first portion of the substrate and a resistive pattern on the second portion of the substrate. A second electrically conductive layer is then formed on a third portion of the substrate and on the resistive pattern. The second electrically conductive layer is patterned to define a first resistor pattern on the third portion of the substrate and a patterned resistor cap on the resistive pattern.

REFERENCES:
patent: 4643777 (1987-02-01), Maeda
patent: 5489547 (1996-02-01), Erdeljac et al.
patent: 5618749 (1997-04-01), Takahashi et al.
patent: 6040596 (2000-03-01), Choi et al.
patent: 6204105 (2001-03-01), Jung
patent: 6211031 (2001-04-01), Lin et al.
patent: 6436750 (2002-08-01), Dahl
patent: 6548851 (2003-04-01), Bae et al.
patent: 6653155 (2003-11-01), Won et al.
patent: 6730573 (2004-05-01), Ng et al.
patent: 7059041 (2006-06-01), Behammer
patent: 2003/0183880 (2003-10-01), Goto et al.

Affiliated with

Also associated with

Rating

Methods of fabricating integrated circuit devices having... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of fabricating integrated circuit devices having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating integrated circuit devices having... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3729810