Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Reexamination Certificate
2006-02-14
2006-02-14
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
C438S396000, C438S624000
Reexamination Certificate
active
06998322
ABSTRACT:
Capacitors and interconnection structures for silicon carbide are provided having an oxide layer, a layer of dielectric material and a second oxide layer on the layer of dielectric material. The thickness of the oxide layers may be from about 0.5 to about 33 percent of the thickness of the oxide layers and the layer of dielectric material. Capacitors and interconnection structures for silicon carbide having silicon oxynitride layer as a dielectric structure are also provided. Such a dielectric structure may be between metal layers to provide a metal-insulator-metal capacitor or may be used as a inter-metal dielectric of an interconnect structure so as to provide devices and structures having improved mean time to failure. Methods of fabricating such capacitors and structures are also provided.
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Das Mrinal Kanti
Hagleitner Helmut
Lipkin Lori A.
Palmour John W.
Sheppard Scott
Cree Inc.
Dolan Jennifer M
Myers Bigel & Sibley & Sajovec
Thompson Craig A.
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