Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2006-08-22
2006-08-22
Mulpuri, Savitri (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S627000, C257S021000
Reexamination Certificate
active
07095062
ABSTRACT:
A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grown on the non-gallium nitride posts, including on the non-gallium nitride tops. Preferably, gallium nitride pyramids are grown on the non-gallium nitride tops and gallium nitride then is grown on the gallium nitride pyramids. The gallium nitride pyramids preferably are grown at a first temperature and the gallium nitride preferably is grown on the pyramids at a second temperature that is higher than the first temperature. The first temperature preferably is about 1000° C. or less and the second temperature preferably is about 1100° C. or more. However, other than temperature, the same processing conditions preferably are used for both growth steps. The grown gallium nitride on the pyramids preferably coalesces to form a continuous gallium nitride layer. Accordingly, gallium nitride may be grown without the need to form masks during the gallium nitride growth process. Moreover, the gallium nitride growth may be performed using the same processing conditions other than temperatures changes. Accordingly, uninterrupted gallium nitride growth may be performed.
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Davis Robert F.
Gehrke Thomas
Linthicum Kevin J.
Moore & Van Allen PLLC
Mulpuri Savitri
Phillips Steven B.
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