Methods of fabricating double-sided hemispherical silicon...

Details Methods of fabricating double-sided hemispherical silicon... Methods of fabricating double-sided hemispherical silicon...

2008-04-01

2008-04-01

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C257SE21008

Reexamination Certificate

active

07351640

ABSTRACT:
Methods are provided for robust and cost effective techniques to fabricate a semiconductor device having double-sided hemispherical silicon grain (HSG) electrodes for container capacitors. In an embodiment, this is accomplished by forming a layer of hemispherical silicon grain (HSG) polysilicon over interior surfaces of a polysilicon layer of a container formed in a substrate. The top portion of the polysilicon layer may be nitridized.

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