Methods of fabricating and contacting ultra-small semiconductor

Details Methods of fabricating and contacting ultra-small semiconductor Methods of fabricating and contacting ultra-small semiconductor

1996-03-01

1999-09-21

Niebling, John

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

438573, 438604, 438973, 438979, 257 14, 257 25, 257 37, 257623, H01L 2100

Patent

active

059565683

ABSTRACT:
A method of fabricating ultra-small semiconductor devices including providing a mesa on a substrate. A plurality of overlying layers of semiconductor material are grown in overlying relationship to the mesa so that a perpendicular discontinuity is produced in the layers at the mesa sidewall and the first layer overlying the mesa is in contact with the last layer overlying the substrate adjacent the mesa. A spacer of nonconductive material is formed on the discontinuity and the plurality of overlying layers are etched, using the spacer as a mask, so as to form a contact area overlying the mesa and a contact area overlying the substrate adjacent the mesa, and a semiconductor device positioned adjacent the sidewall beneath the spacer and between the contact areas.

REFERENCES:
patent: 5093699 (1992-03-01), Weichold et al.
patent: 5554860 (1996-09-01), Seabaugh
patent: 5659179 (1997-08-01), Goronkin et al.

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