Methods of fabricating a cross-point resistor memory array

Details Methods of fabricating a cross-point resistor memory array Methods of fabricating a cross-point resistor memory array

2005-06-14

2005-06-14

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

Resistor

C438S587000, C438S761000

Reexamination Certificate

active

06905937

ABSTRACT:
Resistive cross-point memory devices are provided, along with methods of manufacture and use. The memory devices are comprised by an active layer of resistive memory material interposed between upper electrodes and lower electrodes. A bit region located within the resistive memory material at the cross-point of an upper electrode and a lower electrode has a resistivity that can change through a range of values in response to application of one, or more, voltage pulses. Voltage pulses may be used to increase the resistivity of the bit region, decrease the resistivity of the bit region, or determine the resistivity of the bit region. A diode is formed between at the interface between the resistive memory material and the lower electrodes, which may be formed as doped regions. The resistive cross-point memory device is formed by doping lines within a substrate one polarity, and then doping regions of the lines the opposite polarity to form diodes. Bottom electrodes are then formed over the diodes with a layer of resistive memory material overlying the bottom electrodes. Top electrodes may then be added at an angled to form a cross-point array defined by the lines and the top electrodes.

REFERENCES:
patent: 5418389 (1995-05-01), Watanabe
patent: 6204139 (2001-03-01), Liu et al.
Article entitled, “Electric-pulse-induced reversible resistance change effect in magnetoresistive films” by S. Q. Liu, N. J. Wu, and A. Ignatiev; published in Applied Physics Letters on May 8, 2000, vol. 76, num. 19, pp. 2749-2751.

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