Methods of evaluating titanium nitride and of forming tungsten w

Details Methods of evaluating titanium nitride and of forming tungsten w Methods of evaluating titanium nitride and of forming tungsten w

1997-10-08

2000-03-07

Dutton, Brian

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

356382, H01L 2166, G01R 3126, G01B 1106

Patent

active

060339233

ABSTRACT:
After a TiN film is formed on an Si substrate by sputtering, CVD or the like, an optical constant such as a refractive index of the TiN film is measured. If the refractive index relative to light having a wavelength of 700 nm is 2.0 or smaller, it is judged that a nitridation degree of the TiN film is sufficiently high (near to a composition ratio Ti/N=1). A W film formed on the TiN film judged as above has good adhesion relative to the TiN film. This W film forming method may be applied to forming a wiring with a W plug.

REFERENCES:
patent: 5835226 (1998-11-01), Berman et al.

Affiliated with

Also associated with

Rating

Methods of evaluating titanium nitride and of forming tungsten w does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of evaluating titanium nitride and of forming tungsten w, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of evaluating titanium nitride and of forming tungsten w will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-362216