Etching a substrate: processes – Nongaseous phase etching of substrate – Etching inorganic substrate
Patent
1996-07-26
1999-04-06
Codd, Bernard P.
Etching a substrate: processes
Nongaseous phase etching of substrate
Etching inorganic substrate
216 41, 216100, 216108, 438597, 438619, 438753, 438756, 438757, B44C 122, H05K 306
Patent
active
058913548
ABSTRACT:
Methods of wet etching through a silicon substrate using composite etch-stop layers are disclosed. In one embodiment, the composite etch stop comprises a layer of silicon dioxide and a layer of polyimide.
REFERENCES:
patent: 3536547 (1970-10-01), Schmidt
patent: 3926715 (1975-12-01), Sussman
patent: 4430153 (1984-02-01), Gleason et al.
patent: 4440729 (1984-04-01), Jonsson
patent: 4539392 (1985-09-01), Kadoi
patent: 4600934 (1986-07-01), Aine et al.
patent: 4648179 (1987-03-01), Bhattacharyya et al.
patent: 4671850 (1987-06-01), Shimkunas
patent: 4784721 (1988-11-01), Holmen et al.
patent: 5055907 (1991-10-01), Jacobs
patent: 5201987 (1993-04-01), Hawkins et al.
patent: 5229916 (1993-07-01), Frankeny et al.
patent: 5308442 (1994-05-01), Taub et al.
patent: 5369299 (1994-11-01), Byrne
patent: 5376586 (1994-12-01), Beilin et al.
patent: 5670062 (1997-09-01), Lin et al.
Beilin Solomon I.
Chou William T.
Lee Michael G.
Peters Michael G.
Wang Wen-chou Vincent
Codd Bernard P.
Fujitsu Limited
LandOfFree
Methods of etching through wafers and substrates with a composit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of etching through wafers and substrates with a composit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of etching through wafers and substrates with a composit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1368290