Methods of etching through wafers and substrates with a composit

Etching a substrate: processes – Nongaseous phase etching of substrate – Etching inorganic substrate

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216 41, 216100, 216108, 438597, 438619, 438753, 438756, 438757, B44C 122, H05K 306

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active

058913548

ABSTRACT:
Methods of wet etching through a silicon substrate using composite etch-stop layers are disclosed. In one embodiment, the composite etch stop comprises a layer of silicon dioxide and a layer of polyimide.

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