Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2006-05-09
2008-10-14
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
C438S669000, C438S706000, C438S720000, C257SE21219, C257SE21218
Reexamination Certificate
active
07435681
ABSTRACT:
Methods which comprise: providing a stack to be etched, the stack comprising a metal interconnect layer disposed above a substrate, a barrier layer disposed above the metal interconnect layer, a hard mask layer disposed on the barrier layer, and a patterning layer disposed above the hard mask layer wherein the patterning layer defines a pattern above the hard mask layer; and etching the pattern through the hard mask layer and at least a portion of the barrier layer, wherein the etching through an interface between the hard mask layer and the barrier layer is carried out using a fluorine-containing etch recipe.
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Lee Chun-Hung
Lee Hong-Ji
Ahmadi Mohsen
Geyer Scott B.
Jianq Chyun IP Office
Macronix International Co. Ltd.
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