Methods of etching silicon-oxide-containing materials

Details Methods of etching silicon-oxide-containing materials Methods of etching silicon-oxide-containing materials

2005-10-11

2005-10-11

Kornakov, M. (Department: 1746)

Etching a substrate: processes

Gas phase etching of substrate

Etching inorganic substrate

C216S067000, C156S345410, C156S345430, C156S345440, C156S345470, C156S345480, C438S710000

Reexamination Certificate

active

06953531

ABSTRACT:
The invention encompasses a method of enhancing selectivity of etching silicon dioxide relative to one or more organic substances. A material comprising one or more elements selected from Group VIII of the periodic table is provided within a reaction chamber; and a substrate is provided within the reaction chamber. The substrate has both a silicon-oxide-containing composition and at least one organic substance thereover. The silicon-oxide-containing composition is plasma etched within the reaction chamber. The plasma etching of the silicon-oxide-containing composition has increased selectivity for the silicon oxide of the composition relative to the at least one organic substance than would plasma etching conducted without the material in the chamber. The invention also encompasses a plasma reaction chamber assembly. The assembly comprises at least one interior wall, and at least one liner along the at least one interior wall. The liner comprises one or more of Ru, Fe, Co, Ni, Rh, Pd, Os, W, Ir, Pt and Ti.

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