Methods of etching polysilicon and methods of forming...

Details Methods of etching polysilicon and methods of forming... Methods of etching polysilicon and methods of forming...

2011-03-08

2011-03-08

Tran, Binh X (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S754000, C216S006000, C216S104000, C216S107000, C216S108000, C216S109000

Reexamination Certificate

active

07902081

ABSTRACT:
A method of etching polysilicon includes exposing a substrate comprising polysilicon to a solution comprising water, HF, and at least one of a conductive metal nitride, Pt, and Au under conditions effective to etch polysilicon from the substrate. In one embodiment, a substrate first region comprising polysilicon and a substrate second region comprising at least one of a conductive metal nitride, Pt, and Au is exposed to a solution comprising water and HF. The solution is devoid of any detectable conductive metal nitride, Pt, and Au prior to the exposing. At least some of the at least one are etched into the solution upon the exposing. Then, polysilicon is etched from the first region at a faster rate than any etch rate of the first region polysilicon prior to the etching of the at least some of the conductive metal nitride, Pt, and Au.

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