Etching a substrate: processes – Gas phase and nongaseous phase etching on the same substrate
Reexamination Certificate
2007-07-05
2010-11-23
Culbert, Roberts (Department: 1716)
Etching a substrate: processes
Gas phase and nongaseous phase etching on the same substrate
C438S704000, C977S888000
Reexamination Certificate
active
07837889
ABSTRACT:
Embodiments of the invention include methods of etching nanodots, to methods of removing nanodots from substrates, and to methods of fabricating integrated circuit devices. In one embodiment, a method of etching nanodots that include a late transition metal includes exposing such nanodots to a gas comprising a phosphorus and halogen-containing compound and an oxidizing agent. After the exposing, the nanodots which are remaining and were exposed are etched (either partially or completely) with an aqueous solution comprising HF.
REFERENCES:
patent: 5976394 (1999-11-01), Chung
patent: 6846424 (2005-01-01), Baum et al.
patent: 7199005 (2007-04-01), Sandhu et al.
patent: 7202127 (2007-04-01), Busch et al.
patent: 7268034 (2007-09-01), Basceri et al.
patent: 7320911 (2008-01-01), Basceri et al.
patent: 7393741 (2008-07-01), Sandhu et al.
patent: 7393743 (2008-07-01), Manning
patent: 7413952 (2008-08-01), Busch et al.
patent: 7439152 (2008-10-01), Manning
patent: 7445990 (2008-11-01), Busch et al.
patent: 7445991 (2008-11-01), Manning
patent: 7473637 (2009-01-01), Kraus et al.
patent: 7517753 (2009-04-01), Manning
patent: 7534694 (2009-05-01), Manning
patent: 7544563 (2009-06-01), Manning
patent: 7557013 (2009-07-01), Bhat et al.
patent: 7557015 (2009-07-01), Sandhu et al.
patent: 7575978 (2009-08-01), Kraus et al.
patent: 2005/0090113 (2005-04-01), Chang
Cheng et al.,Thermal desorption spectra of SiO2films deposited on Si and on thermal SiO2by tetraethylortho-silicate/O3atmospheric-pressure chemical. . . , J. Appl. Phys., vol. 85, No. 10, pp. 7140-7145 (May 15, 1999).
Fujino et al.,Dependence of Deposition Rate on Base Materials in TEOS/O2Ap CVD, VMIC Conference, pp. 187-193 (Jul. 12-13, 1990).
Culbert Roberts
Micro)n Technology, Inc.
Wells St. John P.S.
LandOfFree
Methods of etching nanodots, methods of removing nanodots... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of etching nanodots, methods of removing nanodots..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of etching nanodots, methods of removing nanodots... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4185442