Methods of erasing a memory device and a method of programming a

Details Methods of erasing a memory device and a method of programming a Methods of erasing a memory device and a method of programming a

2000-02-16

2000-11-07

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518514, 36518518, 36518527, G11C 1600

Patent

active

06144586&

ABSTRACT:
A method of erasing and a method of programming a nonvolatile memory cell in a chip is disclosed. Said cell comprises a semiconductor substrate including a source and a drain region and a channel therebetween, a floating gate extending over a portion of said channel, a control gate extending over another portion of the channel region, and a program gate capacitively coupled through a dielectric layer to said floating gate. The methods or schemes are using substantially the lowest possible voltage to erase a nonvolatile memory cell of the floating-gate type without having the SILC problem. Therefore, these schemes are expected to allow a further scaling of the minimum feature size of Flash memory products which is necessary for cost reduction and density increase.
The present invention also aims to further decrease the voltages necessary to erase/program the memory device without degrading the corresponding performance.

REFERENCES:
patent: 4462090 (1984-07-01), Iizuka
patent: 5077691 (1991-12-01), Haddad et al.
patent: 5235544 (1993-08-01), Caywood
patent: 5313421 (1994-05-01), Guterman
patent: 5349220 (1994-09-01), Hong
patent: 5491657 (1996-02-01), Haddad et al.
patent: 5583810 (1996-12-01), Van Houdt et al.
patent: 5617358 (1997-04-01), Kodama
patent: 5708588 (1998-01-01), Haddad et al.
patent: 5969991 (1999-10-01), Van Houdt et al.
European Patent Office Search Report, Application No. EP 98 87 0108.

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