Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2007-01-02
2007-01-02
Norton, Nadine (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
C438S637000, C438S726000, C134S001200, C134S001300, C435S283100
Reexamination Certificate
active
10925555
ABSTRACT:
A process for photoresist layer removal from a semiconductor wafer comprises exposing at relatively high temperature the wafer to an RIE-free microwave-energy-generated plasma of a primary gas mixture, the exposing causing photoresist removal such as by ashing. The method also comprises determining an endpoint to the removal by a determined change in the visible light emanating from a chamber containing the wafer.A multi-step process of the present invention comprises the above method and a preliminary RIE-free microwave-energy-generated plasma that solubilizes polymer on walls of vias of the wafer. This multi-step process also comprises, following the exposing step, a cooling step, a cooling step with a temperature check, and a deglazing step. The deglazing step also uses an RIE-free microwave-energy-generated plasma. Specific gas mixtures for the respective plasmas are exemplified. Other embodiments of methods of the present invention are comprised of less steps, or a consolidation of such steps.
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Boumerzoug et al.; A Dry Process for Polymer Sidwall Residue After Via-Hole Etching; 2000 IEEE/SEMI Advanced Semiconductor Manufacturing Conference; 7803-5921-6/00/2000 IEEE pp. 281-286.
Han Xu; Manufacturing Qualification of Plasma Wafer Cleaning Processes for FEOL and BEOL Applications; PEUG 2003.
Kimberley Koretchko; Solvent Free post Metal Etch Veil Removal Proces Development; Department of Materials Science and Engineering at North Carolina State University, Raliegh; 2002.
Campbell Timothy Scott
Hinckley Kelly
Murphey Paul B.
Oman Daniel M.
Wheeler Paul Edward
Agere Systems Inc.
George Patricia A.
Norton Nadine
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