Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2006-06-15
2010-06-08
Nhu, David (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257S347000, C257S774000, C257SE21217, C257SE21238, C257SE21249, C257SE21267
Reexamination Certificate
active
07732897
ABSTRACT:
A structure includes a substrate having a plurality of scribe line areas surrounding a plurality of die areas. Each of the die areas includes at least one first conductive structure formed over the substrate. Each of the scribe line areas includes at least one active region and at least one non-active region. The active region includes a second conductive structure formed therein. The structure further includes at least one first passivation layer formed over the first conductive structure and second conductive structure, wherein at least a portion of the first passivation layer within the non-active region is removed, whereby die-sawing damage is reduced.
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Jeng Shin-Puu
Tsai Hao-Yi
Duane Morris LLP
Nhu David
Taiwan Semiconductor Manufacturing Co. Ltd
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