Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2006-06-20
2006-06-20
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
With measuring or testing
C438S181000, C438S185000, C438S232000, C438S301000, C438S306000, C438S514000, C438S519000, C438S527000, C324S658000, C324S715000, C324S754120, C324S765010
Reexamination Certificate
active
07063991
ABSTRACT:
Disclosed herein are various methods of determining characteristics of doped regions on device wafers, and a system for accomplishing same. In one illustrative embodiment, the method includes providing a device substrate comprising a plurality of masked areas, a plurality of unmasked areas, and at least one doped region formed in the substrate, determining a ratio between the unmasked areas and the masked areas for the device substrate, illuminating an area of the device substrate comprising the masked areas, the unmasked areas, and at least one doped region, and measuring an induced surface photovoltage of the device substrate while accounting for the ratio of the unmasked areas and the masked areas of the device substrate. In another illustrative embodiment, the method includes providing an SOI substrate comprised of an active layer, the active layer having a thickness, illuminating an area of the substrate using a light source having a wavelength that is sufficiently long such that an excited region created in the active layer due to the illumination does not extend beyond the thickness of the active layer, and measuring an induced surface photovoltage resulting from the illumination.
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Krueger Christian
Zhao Zhiyong
Advanced Micro Devices , Inc.
Baumeister B. William
Shankle Alexander J.
Williams Morgan & Amerson P.C.
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