Methods of determining an etching end point based on...

Details Methods of determining an etching end point based on... Methods of determining an etching end point based on...

2007-12-11

2007-12-11

Toatley, Jr., Gregory J. (Department: 2877)

Optics: measuring and testing

With plural diverse test or art

Reexamination Certificate

active

11015087

ABSTRACT:
An etching end point of a plasma etch is determined by defining an etch-stop condition. A layer formed on a substrate is etched using a plasma. A luminous intensity of the plasma is measured to determine a first luminous intensity. The luminous intensity is measured again after a predetermined time to determine a second luminous intensity. A determination is made whether a disturbance occurs. Compensation is applied to the measured luminous intensity if the disturbance occurs. A determination is made whether the measured luminous intensity or the compensated luminous intensity satisfies the etch stop condition.

REFERENCES:
patent: 4491499 (1985-01-01), Jerde et al.
patent: 5322590 (1994-06-01), Koshimizu
patent: 6024831 (2000-02-01), Hwang et al.
patent: 6157867 (2000-12-01), Hwang et al.
patent: 6669810 (2003-12-01), Miyazaki et al.
patent: 6738756 (2004-05-01), Brown et al.
patent: 2003/0085198 (2003-05-01), Yi et al.
patent: 10-261622 (1998-09-01), None
patent: 11-054480 (1999-02-01), None
patent: 20-0262123 (2002-01-01), None

Affiliated with

Also associated with

Rating

Methods of determining an etching end point based on... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of determining an etching end point based on..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of determining an etching end point based on... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3866711