Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – Deep level dopant
Reexamination Certificate
2008-04-02
2011-10-11
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With specified dopant
Deep level dopant
C257S607000, C257S565000, C257S592000, C257SE21144, C257SE21468, C438S309000, C438S311000, C438S341000, C438S369000, C438S373000, C438S374000, C438S376000
Reexamination Certificate
active
08035196
ABSTRACT:
The present invention provides a method of forming a bipolar transistor. The method includes doping a silicon layer with a first type of dopant and performing a first implant process to implant dopant of a second type opposite the first type in the silicon layer. The implanted dopant has a first dopant profile in the silicon layer. The method also includes performing a second implant process to implant additional dopant of the second type in the silicon layer. The additional implanted dopant has a second dopant profile in the silicon layer different than the first dopant profile. The method further includes growing an insulating layer formed over the silicon layer by consuming a portion of the silicon layer and the first type of dopant.
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Krutsick Thomas J.
Speyer Christopher J.
Harriston William
Mandala Victor A
Williams Morgan & Amerson
Zarlink Semiconductor (US) Inc.
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