Methods of controlling oxygen partial pressure during...

Details Methods of controlling oxygen partial pressure during... Methods of controlling oxygen partial pressure during...

2005-08-30

2005-08-30

Talbot, Brian K. (Department: 1762)

Coating processes

Electrical product produced

Condenser or capacitor

C427S126300, C427S376200, C427S377000, C427S372200, C427S081000

Reexamination Certificate

active

06936301

ABSTRACT:
Oxygen partial pressure may be controlled during annealing of a perovskite dielectric layer by providing an oxygen-absorbing layer adjacent the perovskite dielectric layer, and annealing the perovskite dielectric layer in an ambient that includes an ambient oxygen partial pressure, such that the oxygen-absorbing layer locally reduces the oxygen partial pressure adjacent the perovskite dielectric layer to below the ambient oxygen partial pressure. Thus, a perovskite dielectric layer can be annealed without the need to provide ultra-high vacuum and/or ultra-high purity ambient environments.

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Nakamura et al.,Iron mixed-valence compounds, BaSm(Cu0.5+xFe0.5−x)2O5+δI: Synthesis and chemical characterization, Physica C, V. 338, 2000, pp. 121-125.
Song et al.,Pressure Effect on the Formation of Ferroelectric SrBi2Ta2O9Thin Films, Jpn. J. Appl. Phys., vol. 39, 2000, pp. 2791-2792.
Bursill et al,Crystallization of sol-gel derived lead-zirconate-titanate thin films in argon and oxygen atmospheres, Journal of Applied Physics, vol. 75, No. 9, 1994, pp. 4501-4509.

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