Methods of chemical vapor deposition (CVD) of tungsten films on

Details Methods of chemical vapor deposition (CVD) of tungsten films on Methods of chemical vapor deposition (CVD) of tungsten films on

1992-06-15

1995-07-18

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437192, 437203, H01L 2144

Patent

active

054341108

ABSTRACT:
Methods of chemical vapor deposition (CVD) are disclosed wherein high quality films are deposited on patterned wafer substrates. In the methods, a patterned wafer is rotated about an axis thereof in a CVD reaction chamber and reactant gases are directed into the reaction chamber and toward the patterned wafer substrate in a direction generally perpendicular to the plane of rotation of the wafer. The reaction chamber is maintained at a suitable pressure and the wafer is heated to a suitable temperature whereby a high quality film is deposited by CVD on the patterned wafer substrate. The process is applicable to deposit elemental films, compound films, alloy films and solid solution films, and is particularly advantageous in that high film deposition rates and high reactant conversion rates are achieved.

REFERENCES:
patent: 3641974 (1972-02-01), Yamada et al.
patent: 4404236 (1983-09-01), Komatsu et al.
patent: 4565157 (1986-01-01), Brors et al.
patent: 4654509 (1987-03-01), Robinson et al.
patent: 4772356 (1988-09-01), Schumaker et al.
patent: 4789771 (1988-12-01), Robinson et al.
patent: 4794019 (1988-12-01), Miller
patent: 4798165 (1989-01-01), deBoer et al.
patent: 4800105 (1989-01-01), Nakayama
patent: 4821674 (1989-04-01), deBoer et al.
patent: 4828224 (1989-05-01), Crabb et al.
patent: 4828870 (1989-05-01), Ando et al.
patent: 4839145 (1989-06-01), Gale et al.
patent: 4846102 (1989-07-01), Ozias
patent: 4851295 (1989-07-01), Brors
patent: 4868003 (1989-09-01), Temple et al.
patent: 4976996 (1990-12-01), Monkowski et al.
patent: 4986216 (1991-01-01), Ohmori et al.
patent: 4993355 (1991-02-01), deBoer et al.
patent: 4994301 (1991-02-01), Kusumoto et al.
patent: 4996942 (1991-03-01), deBoer et al.
patent: 5040046 (1991-08-01), Chhabra et al.
patent: 5063031 (1991-11-01), Sato
patent: 5106453 (1992-04-01), Benko et al.
K. Sugawara, "Silicon Epitaxial Growth by Rotating Disk Method", 1972, pp. 1749-1760.
M. L. Hitchman et al., "The Study of CVD Processes With Rotating Discs", 1977, pp. 1021-1029.
R. Pollard et al., "Silicon Deposition on a Rotating Disk", 1980, pp. 744-752.
M. L. Hitchman et al., "Heterogeneous Kinetics and Mass Transfer in Chemical Vapour Deposition Processes. Part II. Application to Silicon Epitaxy", 1981, pp. 283-296.
M. L. Hitchman et al., "Heterogeneous Kinetics & Mass Transfer in Chemical Vapour Deposition Processes. Part III. The Rotating Disc Reactor", 1982, pp. 43-56.
G. Evans et al., "A Numerical Model of the Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition Reactor", 1987, pp. 928-935.
M. E. Coltrin et al., "A Mathematical Model of the Fluid Mechanics and Gas-Phase Chemistry in a Rotating Disk Chemical Vapor Deposition Reactor", 1989, pp. 819-829.
G. S. Tompa et al., "A Parametric Investigation of GaAs Epitaxial Growth Uniformity in a High Speed, Rotating-Disk MOCVD Reactor", 1988, pp. 220-227.
G. S. Tompa et al., "MOCVD Growth of CdTe and HgTe on GaAs in a Vertical, High-Speed, Rotating-Disc Reactor", 1989 pp. 447-452.
G. S. Tompa et al., "MOVPE Growth of II-VI Compounds in a Vertical Reactor with High-Speed Horizontal Rotating Disk", 1991, pp. 198-202.
M. A. McKee et al., "Growth of Highly Uniform, Reproducible InGaAs Films in a Multiwafer Rotating Disk Reactor by MOCVD", 1991, pp. 445-451.
P-I. Lee et al., "Chemical Vapor Deposition of Tungsten (CVD W) as Submicron Interconnection and Via Stud", 1989, pp. 2108-2112.
H. Y. Kumagai, "Plasma Enhanced CVD", 1984, pp. 189-205.

Affiliated with

Also associated with

Rating

Methods of chemical vapor deposition (CVD) of tungsten films on does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of chemical vapor deposition (CVD) of tungsten films on , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of chemical vapor deposition (CVD) of tungsten films on will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2418968