Methods for transferring a useful layer of silicon carbide...

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S459000

Reexamination Certificate

active

11196733

ABSTRACT:
Methods for transferring a useful layer of silicon carbide to a receiving substrate are described. In an embodiment, the invention relates to a method for recycling of a silicon carbide source substrate by removal of the excess zone followed by a finishing step to prepare the source substrate for recycling and reuse. Preferably, the excess zone is removed by a thermal budget where the temperature and time of such treatment causes exfoliation of the excess zone. The finishing step is performed in a manner to provide the desired surface roughness for the substrate so that it can be recycled for re-use. The technique includes implanting at least H+ions through a front face of a source substrate of silicon carbide with an implantation energy E greater than or equal to 95 keV and an implantation dose D chosen to form an optimal weakened zone near a mean implantation depth, the optimal weakened zone defining the useful layer and a remainder portion of the source substrate. The method also includes bonding the front face of the source substrate to a contact face of the receiving substrate, and detaching the useful layer from the remainder portion of the source substrate along the weakened zone while minimizing or avoiding forming an excess zone of silicon carbide material at the periphery of the useful layer that was not transferred to the receiving substrate during detachment.

REFERENCES:
patent: 6020252 (2000-02-01), Aspar et al.
patent: 6150239 (2000-11-01), Goesele et al.
patent: 6251754 (2001-06-01), Ohshima et al.
patent: 6323109 (2001-11-01), Okonogi
patent: 6355541 (2002-03-01), Holland et al.
patent: 6391799 (2002-05-01), Di Cioccio
patent: 6534380 (2003-03-01), Yamauchi et al.
patent: 6562127 (2003-05-01), Kud et al.
patent: 6566233 (2003-05-01), Yokokawa et al.
patent: 2002/0094668 (2002-07-01), Aspar et al.
patent: 2003/0040136 (2003-02-01), Eriksen et al.
patent: 2004/0014299 (2004-01-01), Moriceau et al.
patent: 2004/0224482 (2004-11-01), Kub et al.
Bennett et al., “Complete surface exfoliation of 4H-SiC by H+—and Si+—coimplantation,” Applied Physics Letters, vol. 76, No. 22, pp. 3265-3267 (2000).
Di Cioccio et al., “Silicon carbide on insulator formation using the Smart Cut process,” Electronics Letters, vol. 32, No. 12, pp. 1144-1145 (1996).
Di Cioccio et al., “Silicon carbide on insulator formation by the Smart-Cut® process,” Materials Science and Engineering B46, pp. 349-356 (1997).
Gregory et al., “The effects of damage on hydrogen-implant-induced thin-film separation from bulk silicon carbide,” Materials Research Society Symposium Proceedings, vol. 572, pp. 33-38 (1999).
Tong et al., “Si and SiC layer transfer by high temperature hydrogen implantation and lower temperature layer splitting,” Electronics Letters, vol. 34, No. 4, pp. 408-409 (1998).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Methods for transferring a useful layer of silicon carbide... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for transferring a useful layer of silicon carbide..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for transferring a useful layer of silicon carbide... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3855830

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.