Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2007-08-28
2007-08-28
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S459000
Reexamination Certificate
active
11196733
ABSTRACT:
Methods for transferring a useful layer of silicon carbide to a receiving substrate are described. In an embodiment, the invention relates to a method for recycling of a silicon carbide source substrate by removal of the excess zone followed by a finishing step to prepare the source substrate for recycling and reuse. Preferably, the excess zone is removed by a thermal budget where the temperature and time of such treatment causes exfoliation of the excess zone. The finishing step is performed in a manner to provide the desired surface roughness for the substrate so that it can be recycled for re-use. The technique includes implanting at least H+ions through a front face of a source substrate of silicon carbide with an implantation energy E greater than or equal to 95 keV and an implantation dose D chosen to form an optimal weakened zone near a mean implantation depth, the optimal weakened zone defining the useful layer and a remainder portion of the source substrate. The method also includes bonding the front face of the source substrate to a contact face of the receiving substrate, and detaching the useful layer from the remainder portion of the source substrate along the weakened zone while minimizing or avoiding forming an excess zone of silicon carbide material at the periphery of the useful layer that was not transferred to the receiving substrate during detachment.
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Ghyselen Bruno
Letertre Fabrice
Lee Hsien-Ming
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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