Methods for the formation of a silicon oxide film

Coating processes – Heat decomposition of applied coating or base material

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427228, 427377, 427379, 427387, 4273977, 437235, 437238, B05D 302

Patent

active

053805550

ABSTRACT:
Disclosed is a method for the formation of ceramic silicon oxide films on substrate surfaces wherein said films are thick, free of cracks and pinholes, and insoluble in organic solvents. These films are formed by coating the surface of a substrate with a silicon resin having the general formula

REFERENCES:
patent: 5118530 (1992-06-01), Hanneman et al.
patent: 5145723 (1992-09-01), Ballance et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Methods for the formation of a silicon oxide film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for the formation of a silicon oxide film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for the formation of a silicon oxide film will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-849638

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.