Semiconductor device manufacturing: process – Having diamond semiconductor component
Reexamination Certificate
2005-11-15
2005-11-15
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Having diamond semiconductor component
C438S931000
Reexamination Certificate
active
06964880
ABSTRACT:
A method of forming a strained silicon device and structures formed thereby is described. That method comprises forming a polysilicon layer on a first and second side of a substantially planar diamond coated silicon wafer, wherein the second side of the substantially planar diamond coated silicon wafer comprises defects, bonding a silicon device layer to a first side of the polysilicon layer, and removing the defects from the second side of the substantially planar diamond coated silicon wafer, wherein a tensile strain in the silicon device layer is induced that increases the electron mobility of the strained silicon device layer.
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Dang Phuc T.
Intel Corporation
Ortiz Kathy J.
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