Methods for texturizing polysilicon utilizing gas phase nucleati

Details Methods for texturizing polysilicon utilizing gas phase nucleati Methods for texturizing polysilicon utilizing gas phase nucleati

1991-04-10

1992-05-12

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437233, 437919, 437967, 437977, H01L 21203

Patent

active

051127733

ABSTRACT:
A process for texturization of polycrystalline silicon comprising the steps of utilizing gas phase nucleation by injecting a material to a cause heterogeneous nucleation or by increasing deposition temperature or pressure to cause a homogeneous nucleation of the silicon source itself. Heterogeneous or homogeneous gas phase nucleation causes large, stable textures in the deposited polysilicon that can be doped using conventional fabrication techniques.

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"Rugged Surface Poly-Si Electrode and Low Temperature Deposited Si3N4 for 64mbit and Beyond STC Dram Cell" by M. Yoshimaru et al., pp. 27.4.1-27.4.4, 1990.

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