Methods for texturizing polysilicon

Details Methods for texturizing polysilicon Methods for texturizing polysilicon

1991-02-11

1992-04-07

Kunemund, Robert

Fishing, trapping, and vermin destroying

437233, 437238, 437243, 437946, 437977, 437212, 427212, H01L 21205

Patent

active

051028328

ABSTRACT:
A process for texturization of polycrystalline silicon comprising the steps of preparing the wafer surface prior to poly deposition with a material which will cause the poly to preferentially nucleate during deposition and form poly nodules on the wafer surface. Polysilicon will continue to coat the previously created poly nodules throughout poly deposition, thereby resulting in a stable, texturized polysilicon structure.

REFERENCES:
"Rugged Surface Poly-Si Electrode and Low Temperature Deposited Si3N4 for 64 Mb and Beyond STC Dram Cell" by M. Yoshimaru et al., Oki Electric Industry Co., Ltd., VLSI R&D Laboratory 550-1.

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