Methods for soldering semiconductor devices

Details Methods for soldering semiconductor devices Methods for soldering semiconductor devices

1991-02-05

1992-01-21

Seidel, Richard K.

Metal fusion bonding

Process

Metal to nonmetal with separate metallic filler

228253, 437183, 437190, 437902, B23K 3522, B23K 1002

Patent

active

050821628

ABSTRACT:
This invention presents a new soldering material comprising an indium layer formed on EFTE film for solder-mounting a semiconductor device onto a metal heat sink. This indium layer can be easily transferred onto the heat sink by pressure applied by a tool, without the aid of ultrasonic energy. This produces a highly immaculate surface of the indium layer transferred onto the heat sink, and achieves stable soldering strength of the soldered semiconductor device. This invention also offers a multi-layered soldering material comprising a thin layer of metal of which the melting point is higher than the soldering temperature, and two indium layers sandwiching said metal layer, formed on an EFTE film. This multi-layered soldering material can be easily transferred onto a metal heat sink by a pressure applying tool without the aid of ultrasonic energy resulting in the stable soldering of a semiconductor device even if it has surface irregularities, without causing an electrical leakage or short circuit.

REFERENCES:
patent: 2468664 (1949-04-01), Hanford
patent: 4142662 (1979-03-01), Holbrook et al.
patent: 4311727 (1982-01-01), Lazzari
patent: 4380862 (1983-04-01), Nyul
patent: 4677175 (1987-06-01), Ihara et al.
patent: 4684055 (1987-08-01), Baer et al.
patent: 4796082 (1989-01-01), Murakami et al.

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